PROCEEDINGS VOLUME 10175
ELECTRON TECHNOLOGY CONFERENCE ELTE 2016 | 11-14 SEPTEMBER 2016
Electron Technology Conference 2016
IN THIS VOLUME

0 Sessions, 48 papers, 0 videos
Review Paper  (1)
Invited  (1)
Photonics  (14)
Microsystems  (3)
ELECTRON TECHNOLOGY CONFERENCE ELTE 2016
11-14 September 2016
Wisla, Poland
Front Matter: Volume 10175
Proc. SPIE 10175, Front Matter: Volume 10175, 1017501(28 December 2016);doi: 10.1117/12.2270351
Review Paper
Proc. SPIE 10175, Electron Technology: ELTE 2016, 1017502(22 December 2016);doi: 10.1117/12.2270336
Invited
Proc. SPIE 10175, Electron beam throughput from raster to imaging, 1017503(22 December 2016);doi: 10.1117/12.2262318
Micro- and Nanoelectronics
Proc. SPIE 10175, Integrated testing system FiTest for diagnosis of PCBA, 1017504(22 December 2016);doi: 10.1117/12.2259860
Proc. SPIE 10175, Silicon pixel detector prototyping in SOI CMOS technology, 1017505(22 December 2016);doi: 10.1117/12.2261485
Proc. SPIE 10175, Voiding in lead-free soldering of components with large solder pads, 1017506(22 December 2016);doi: 10.1117/12.2258608
Proc. SPIE 10175, Manufacturing of HfOxNy films using reactive magnetron sputtering for ISFET application, 1017507(22 December 2016);doi: 10.1117/12.2261660
Proc. SPIE 10175, Effect of interface traps parameters on admittance characteristics of the MIS (metal-insulator-semiconductor) tunnel structures, 1017508(22 December 2016);doi: 10.1117/12.2261666
Proc. SPIE 10175, A fully differential OTA with dynamic offset cancellation in 28nm FD-SOI process, 1017509(22 December 2016);doi: 10.1117/12.2261891
Proc. SPIE 10175, A 10 Gs/s latched comparator with dynamic offset cancellation in 28nm FD-SOI process, 101750A(22 December 2016);doi: 10.1117/12.2263521
Proc. SPIE 10175, Simulation of electrical characteristics of GaN vertical Schottky diodes, 101750B(22 December 2016);doi: 10.1117/12.2260777
Proc. SPIE 10175, Modeling high-frequency capacitance in SOI MOS capacitors, 101750C(22 December 2016);doi: 10.1117/12.2260788
Proc. SPIE 10175, New approach to the electrical representation of SOFC, 101750D(22 December 2016);doi: 10.1117/12.2258589
Proc. SPIE 10175, Bipolar transistor in VESTIC technology: prototype, 101750E(22 December 2016);doi: 10.1117/12.2260787
Proc. SPIE 10175, Reactive Ion Etching (RIE) of silicon for the technology of nanoelectronic devices and structures, 101750F(22 December 2016);doi: 10.1117/12.2261676
Proc. SPIE 10175, Multiplatform application for calculating a combined standard uncertainty using a Monte Carlo method, 101750G(22 December 2016);doi: 10.1117/12.2261385
Proc. SPIE 10175, Impact of nanocrystal(s) location on C-V-t and I-V-t characteristics of ncMOS structures, 101750H(22 December 2016);doi: 10.1117/12.2261816
Proc. SPIE 10175, CMOS standard cells characterization for open defects for test pattern generation , 101750I(22 December 2016);doi: 10.1117/12.2261887
Proc. SPIE 10175, Modeling of tunnel field effect transistor: the impact of construction parameters, 101750J(22 December 2016);doi: 10.1117/12.2261752
Proc. SPIE 10175, Printed PEDOT layers as transparent emitter electrodes for application in flexible inorganic photovoltaic structures, 101750K(22 December 2016);doi: 10.1117/12.2261749
Proc. SPIE 10175, Anisotropic etching of silicon in solutions containing tensioactive compounds, 101750L(22 December 2016);doi: 10.1117/12.2258745
Photonics
Proc. SPIE 10175, Multiparametric methane sensor for environmental monitoring, 101750M(22 December 2016);doi: 10.1117/12.2261498
Proc. SPIE 10175, Effect of oxygen plasma modification on refractive index sensing with micro-cavity in-line Mach-Zehnder interferometer, 101750N(22 December 2016);doi: 10.1117/12.2261406
Proc. SPIE 10175, Reflection configuration of long period grating sensor working at dispersion turning point, 101750O(22 December 2016);doi: 10.1117/12.2263480
Proc. SPIE 10175, Influence of the size of a micro-cavity fabricated in an optical fiber using the femtosecond laser in a form of in-line Mach-Zehnder interferometer on its refractive index sensitivity, 101750P(22 December 2016);doi: 10.1117/12.2260761
Proc. SPIE 10175, Optical properties of lamps with cold emission cathode, 101750Q(22 December 2016);doi: 10.1117/12.2261694
Proc. SPIE 10175, Critical current and electric transport properties of superconducting epitaxial Nb(Ti)N submicron structures, 101750R(22 December 2016);doi: 10.1117/12.2258216
Proc. SPIE 10175, Polarization control based interference microwave photonic filters, 101750S(22 December 2016);doi: 10.1117/12.2261416
Proc. SPIE 10175, Transmission properties analysis of 1D PT-symmetric photonic structures , 101750T(22 December 2016);doi: 10.1117/12.2260706
Proc. SPIE 10175, Fabrication and preliminary characterization of infrared photodetectors based on graphene, 101750U(22 December 2016);doi: 10.1117/12.2261659
Proc. SPIE 10175, Boron liquid solution deposited by spray method for p-type emitter formation in crystalline Si solar cells, 101750V(22 December 2016);doi: 10.1117/12.2261693
Proc. SPIE 10175, Impact of structure mounting of nitride laser bars on the emitted optical power, 101750W(22 December 2016);doi: 10.1117/12.2261681
Proc. SPIE 10175, Electromagnetic field patterning or crystal light, 101750X(22 December 2016);doi: 10.1117/12.2260445
Proc. SPIE 10175, 16-element photodiode array for the angular microdeflection detector and for stabilization of a laser radiation direction, 101750Z(22 December 2016);doi: 10.1117/12.2257558
Microsystems
Proc. SPIE 10175, Diagnosis of electronic systems in SMT technological line, 1017510(22 December 2016);doi: 10.1117/12.2258604
Proc. SPIE 10175, Detection of acetone in exhaled breath with the use of micropreconcentrator and a commercial gas sensor , 1017511(22 December 2016);doi: 10.1117/12.2263268
Proc. SPIE 10175, A test structure for investigation of junctionless FETs as THz radiation sensors , 1017512(22 December 2016);doi: 10.1117/12.2258599
Electronic and Photonic Materials
Proc. SPIE 10175, Measurement system for resistive metal oxide sensors matrix, 1017513(22 December 2016);doi: 10.1117/12.2258737
Proc. SPIE 10175, Selected electrical properties of high ohmic thick-film resistors, 1017514(22 December 2016);doi: 10.1117/12.2255914
Proc. SPIE 10175, Annealing of indium tin oxide (ITO) coated optical fibers for optical and electrochemical sensing purposes , 1017515(22 December 2016);doi: 10.1117/12.2263289
Proc. SPIE 10175, Characterization thin films TiO2 obtained in the magnetron sputtering process, 1017516(22 December 2016);doi: 10.1117/12.2261873
Proc. SPIE 10175, Sol-gel derived antireflective structures for applications in silicon solar cells, 1017517(22 December 2016);doi: 10.1117/12.2261810
Proc. SPIE 10175, Epitaxial lift-off technology of GaAs multijunction solar cells, 1017518(22 December 2016);doi: 10.1117/12.2263185
Proc. SPIE 10175, Structural investigation of MF, RF and DC sputtered Mo thin films for backside photovoltaic electrode, 1017519(22 December 2016);doi: 10.1117/12.2263484
Proc. SPIE 10175, Technology and characterization of Thin-Film Transistors (TFTs) with a-IGZO semiconductor and high-k dielectric layer, 101751A(22 December 2016);doi: 10.1117/12.2258741
Proc. SPIE 10175, Graphene photoconductors fabricated on the substrates with different resistivity , 101751B(22 December 2016);doi: 10.1117/12.2260493
Proc. SPIE 10175, a-SiCxNy:H thin films for applications in solar cells as passivation and antireflective coatings, 101751C(22 December 2016);doi: 10.1117/12.2263801
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