22 December 2016 Manufacturing of HfOxNy films using reactive magnetron sputtering for ISFET application
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Proceedings Volume 10175, Electron Technology Conference 2016; 1017507 (2016) https://doi.org/10.1117/12.2261660
Event: Electron Technology Conference ELTE 2016, 2016, Wisla, Poland
Abstract
Hafnium Oxide-Nitride films were deposited using reactive magnetron sputtering in O2/N2/Ar gas mixture. Deposition was planned according to Taguchi optimization method. Morphology of fabricated layers was tested using AFM technique (Ra=0.2÷1,0 nm). Thickness of HfOXNY films was measured using spectroscopic ellipsometry (t=45÷54 nm). Afterwards MIS structures were created by Al metallization process then layers were electrically characterised using I-V and C-V measurements. This allowed to calculate the electrical parameters of layers such as: flat-band voltage UFB, dielectric constant Ki, interface state trap density Dit and effective charge Qeff. Subsequently, deposited HfOxNy layers were annealed in PDA process (40 min 400 °C 100% N2) after which the electrical characterization was performed again.
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Piotr Firek, Piotr Firek, Piotr Wysokiński, Piotr Wysokiński, } "Manufacturing of HfOxNy films using reactive magnetron sputtering for ISFET application", Proc. SPIE 10175, Electron Technology Conference 2016, 1017507 (22 December 2016); doi: 10.1117/12.2261660; https://doi.org/10.1117/12.2261660
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