22 December 2016 Effect of interface traps parameters on admittance characteristics of the MIS (metal-insulator-semiconductor) tunnel structures
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Proceedings Volume 10175, Electron Technology Conference 2016; 1017508 (2016) https://doi.org/10.1117/12.2261666
Event: Electron Technology Conference ELTE 2016, 2016, Wisla, Poland
Interface traps density (Nit) and gate insulator thickness (tox) impact on MIS tunnel structure electrical characteristics is discussed in respect to bias voltage range corresponding to inversion in the semiconductor substrate region. Effect of Nit and tox on equilibrium and non-equilibrium operation regime of the device is presented. Different models of the small-signal response of interface traps are proposed and discussed in respect to several phenomena related to the traps charging and discharging processes. Presented analysis was performed for the MIS structures with the gate dielectric made of silicon dioxide (SiO2) and hafnium oxide (HfOx). The obtained results proved that the surface density of interface traps (Nit) and the insulator thickness (tox) have correlated impact on the transition between equilibrium and non-equilibrium operation of the MIS tunnel structures.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jakub Jasiński, Andrzej Mazurak, Bogdan Majkusiak, "Effect of interface traps parameters on admittance characteristics of the MIS (metal-insulator-semiconductor) tunnel structures", Proc. SPIE 10175, Electron Technology Conference 2016, 1017508 (22 December 2016); doi: 10.1117/12.2261666; https://doi.org/10.1117/12.2261666


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