22 December 2016 Effect of interface traps parameters on admittance characteristics of the MIS (metal-insulator-semiconductor) tunnel structures
Author Affiliations +
Proceedings Volume 10175, Electron Technology Conference 2016; 1017508 (2016) https://doi.org/10.1117/12.2261666
Event: Electron Technology Conference ELTE 2016, 2016, Wisla, Poland
Abstract
Interface traps density (Nit) and gate insulator thickness (tox) impact on MIS tunnel structure electrical characteristics is discussed in respect to bias voltage range corresponding to inversion in the semiconductor substrate region. Effect of Nit and tox on equilibrium and non-equilibrium operation regime of the device is presented. Different models of the small-signal response of interface traps are proposed and discussed in respect to several phenomena related to the traps charging and discharging processes. Presented analysis was performed for the MIS structures with the gate dielectric made of silicon dioxide (SiO2) and hafnium oxide (HfOx). The obtained results proved that the surface density of interface traps (Nit) and the insulator thickness (tox) have correlated impact on the transition between equilibrium and non-equilibrium operation of the MIS tunnel structures.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jakub Jasiński, Andrzej Mazurak, Bogdan Majkusiak, "Effect of interface traps parameters on admittance characteristics of the MIS (metal-insulator-semiconductor) tunnel structures", Proc. SPIE 10175, Electron Technology Conference 2016, 1017508 (22 December 2016); doi: 10.1117/12.2261666; https://doi.org/10.1117/12.2261666
PROCEEDINGS
8 PAGES


SHARE
RELATED CONTENT

HfO2/Pr2O3 gate dielectric stacks
Proceedings of SPIE (December 30 2016)
PLD of high-k dielectric films on silicon
Proceedings of SPIE (October 08 2004)
Organic CMOS technology by interface treatment
Proceedings of SPIE (August 25 2006)
Simulation and study on the temperature effect of the a...
Proceedings of SPIE (November 11 1999)
Modeling field effect pH sensor
Proceedings of SPIE (December 29 2004)

Back to Top