22 December 2016 Simulation of electrical characteristics of GaN vertical Schottky diodes
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Proceedings Volume 10175, Electron Technology Conference 2016; 101750B (2016) https://doi.org/10.1117/12.2260777
Event: Electron Technology Conference ELTE 2016, 2016, Wisla, Poland
Reverse current of GaN vertical Schottky diodes is simulated using Silvaco ATLAS to optimize the geometry for the best performance. Several physical quantities and phenomena, such as carrier mobility and tunneling mechanism are studied to select the most realistic models. Breakdown voltage is qualitatively estimated based on the maximum electric field in the structure.
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Lidia Łukasiak, Lidia Łukasiak, Jakub Jasiński, Jakub Jasiński, Andrzej Jakubowski, Andrzej Jakubowski, } "Simulation of electrical characteristics of GaN vertical Schottky diodes", Proc. SPIE 10175, Electron Technology Conference 2016, 101750B (22 December 2016); doi: 10.1117/12.2260777; https://doi.org/10.1117/12.2260777

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