22 December 2016 Modeling high-frequency capacitance in SOI MOS capacitors
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Proceedings Volume 10175, Electron Technology Conference 2016; 101750C (2016) https://doi.org/10.1117/12.2260788
Event: Electron Technology Conference ELTE 2016, 2016, Wisla, Poland
This paper presents a model of high frequency capacitance of a SOI MOSCAP. The capacitance in strong inversion is described with minority carrier redistribution in the inversion layer taken into account. The efficiency of the computational process is significantly improved. Moreover, it is suitable for the simulation of thin-film SOI structures. It may also be applied to the characterization of non-standard SOI MOSCAPS e.g. with nanocrystalline body.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lidia Łukasiak, Lidia Łukasiak, Jakub Jasiński, Jakub Jasiński, Romuald B. Beck, Romuald B. Beck, Fawzi A. Ikraiam, Fawzi A. Ikraiam, "Modeling high-frequency capacitance in SOI MOS capacitors", Proc. SPIE 10175, Electron Technology Conference 2016, 101750C (22 December 2016); doi: 10.1117/12.2260788; https://doi.org/10.1117/12.2260788

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