22 December 2016 Reactive Ion Etching (RIE) of silicon for the technology of nanoelectronic devices and structures
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Proceedings Volume 10175, Electron Technology Conference 2016; 101750F (2016) https://doi.org/10.1117/12.2261676
Event: Electron Technology Conference ELTE 2016, 2016, Wisla, Poland
Abstract
In this work we present the investigations aimed at the optimization of the technology of Reactive Ion Etching in sulfur hexafluoride (SF6) plasma of silicon, which is necessary during fabrication of TFET according to the original concept of the device designed at Institute of Microelectronics and Optoelectronics (IMiO) of Warsaw University of Technology (WUT) laboratory. We have performed a two-stage optimization of RIE process’ parameters in order to obtain a controllable process characterized by good selectivity and anisotropy. Presented in this study findings have shown that the SF6 flow most significantly influence onto the RIE process’ results. Selected and optimized processing step will be used in the course of the fabrication of TFET devices, in future.
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Piotr Wiśniewski, Robert Mroczyński, Bogdan Majkusiak, "Reactive Ion Etching (RIE) of silicon for the technology of nanoelectronic devices and structures", Proc. SPIE 10175, Electron Technology Conference 2016, 101750F (22 December 2016); doi: 10.1117/12.2261676; https://doi.org/10.1117/12.2261676
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