22 December 2016 Modeling of tunnel field effect transistor: the impact of construction parameters
Author Affiliations +
Proceedings Volume 10175, Electron Technology Conference 2016; 101750J (2016) https://doi.org/10.1117/12.2261752
Event: Electron Technology Conference ELTE 2016, 2016, Wisla, Poland
Abstract
The aim of the work is to present a theoretical model of tunnel field effect transistor and to investigate the influence of the TFET’s construction parameters on the current-voltage characteristics. The solution to the problem of electrostatics in the structure is based on the numerical solution of two-dimensional Poisson equation and the electron and hole continuity equations. The tunneling process has been taken into account by a non-local interband generation model. Output and transfer characteristics of the double gate TFET were generated.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Piotr Wiśniewski, Piotr Wiśniewski, Bogdan Majkusiak, Bogdan Majkusiak, } "Modeling of tunnel field effect transistor: the impact of construction parameters", Proc. SPIE 10175, Electron Technology Conference 2016, 101750J (22 December 2016); doi: 10.1117/12.2261752; https://doi.org/10.1117/12.2261752
PROCEEDINGS
9 PAGES


SHARE
Back to Top