22 December 2016 Fabrication and preliminary characterization of infrared photodetectors based on graphene
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Proceedings Volume 10175, Electron Technology Conference 2016; 101750U (2016) https://doi.org/10.1117/12.2261659
Event: Electron Technology Conference ELTE 2016, 2016, Wisla, Poland
Abstract
In this work, we report the technology of infrared photodetectors based on graphene layers (GLs). In the course of this work the new set of photolithography masks was especially designed to fabricate test structures. The new masks-set contains a matrix of different types of photodetector structures with varied active area dimensions, as well as additional module for characterization of electro-physical parameters of graphene and graphene-based devices. After careful optimization of consecutive technological steps, test structures were fabricated. First results of electrical characterization of obtained graphene-based photodetectors demonstrated that the developed technology was successful, however, further detailed optical characterization towards sensing parameters and potential applications in infrared detectors is necessary.
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R. Mroczyński, N. Kwietniewski, J. Piotrowski, J. Judek, M. Zdrojek, P. Szczepański, "Fabrication and preliminary characterization of infrared photodetectors based on graphene", Proc. SPIE 10175, Electron Technology Conference 2016, 101750U (22 December 2016); doi: 10.1117/12.2261659; https://doi.org/10.1117/12.2261659
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