22 December 2016 Impact of structure mounting of nitride laser bars on the emitted optical power
Author Affiliations +
Proceedings Volume 10175, Electron Technology Conference 2016; 101750W (2016) https://doi.org/10.1117/12.2261681
Event: Electron Technology Conference ELTE 2016, 2016, Wisla, Poland
Abstract
In this paper, an impact of mounting of structures of nitride laser bars their performance, emitted optical power in particular, is presented. The laser bars of nitride edge-emitting lasers of ridge-waveguide type the InGaN/GaN active areas have been considered. Laser performance has been analysed with the aid of an advanced self-consistent thermalelectrical model, calibrated using experimental data for a single diode laser. The simulated laser bars emit at 408 nm. An optimal number of laser emitters and their various arrangments have been considered. An appliation of Cu heat sinks of various dimensions as well as the p-side-up or the p-side-down laser configurations have been analysed. Moreover a possible application of a diamond heat spreader has been also taken into account.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert P. Sarzała, Robert P. Sarzała, Patrycja Śpiewak, Patrycja Śpiewak, Michał Wasiak, Michał Wasiak, Włodzimierz Nakwaski, Włodzimierz Nakwaski, Szymon Stańczyk, Szymon Stańczyk, Piotr Perlin, Piotr Perlin, } "Impact of structure mounting of nitride laser bars on the emitted optical power", Proc. SPIE 10175, Electron Technology Conference 2016, 101750W (22 December 2016); doi: 10.1117/12.2261681; https://doi.org/10.1117/12.2261681
PROCEEDINGS
9 PAGES


SHARE
Back to Top