22 December 2016 New silicon photodiodes for detection of the 1064nm wavelength radiation
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Proceedings Volume 10175, Electron Technology Conference 2016; 101750Y (2016) https://doi.org/10.1117/12.2257557
Event: Electron Technology Conference ELTE 2016, 2016, Wisla, Poland
In this paper a concept of a new bulk structure of p+-υ-n+ silicon photodiodes optimized for the detection of fast-changing radiation at the 1064 nm wavelength is presented. The design and technology for two types of quadrant photodiodes, the 8-segment photodiode and the 32-element linear photodiode array that were developed according to the concept are described.

Electric and photoelectric parameters of the photodiodes mentioned above are presented.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Maciej Węgrzecki, Maciej Węgrzecki, Tadeusz Piotrowski, Tadeusz Piotrowski, Zbigniew Puzewicz, Zbigniew Puzewicz, Jan Bar, Jan Bar, Ryszard Czarnota, Ryszard Czarnota, Rafal Dobrowolski, Rafal Dobrowolski, Andrii Klimov, Andrii Klimov, Jan Kulawik, Jan Kulawik, Helena Kłos, Helena Kłos, Michał Marchewka, Michał Marchewka, Marek Nieprzecki, Marek Nieprzecki, Andrzej Panas, Andrzej Panas, Bartłomiej Seredyński, Bartłomiej Seredyński, Andrzej Sierakowski, Andrzej Sierakowski, Wojciech Słysz, Wojciech Słysz, Beata Synkiewicz, Beata Synkiewicz, Dariusz Szmigiel, Dariusz Szmigiel, Michał Zaborowski, Michał Zaborowski, } "New silicon photodiodes for detection of the 1064nm wavelength radiation", Proc. SPIE 10175, Electron Technology Conference 2016, 101750Y (22 December 2016); doi: 10.1117/12.2257557; https://doi.org/10.1117/12.2257557


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