22 December 2016 A test structure for investigation of junctionless FETs as THz radiation sensors
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Proceedings Volume 10175, Electron Technology Conference 2016; 1017512 (2016) https://doi.org/10.1117/12.2258599
Event: Electron Technology Conference ELTE 2016, 2016, Wisla, Poland
Abstract
A test chip for investigation of junctionless FETs as sub-THz electromagnetic radiation detectors is presented. A number of sensors have been included in the chip designed for production on the SOI substrate. The sensors differ one from one another by the presence of an antenna, transistor layout and doping details. A technology for fabrication of transistors with the self-aligned gate and well-controlled gate to n+ source/drain separation distance has been developed. Results of device simulation and electrical characterization are presented in the paper.
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Michał Zaborowski, Daniel Tomaszewski, Jacek Marczewski, "A test structure for investigation of junctionless FETs as THz radiation sensors ", Proc. SPIE 10175, Electron Technology Conference 2016, 1017512 (22 December 2016); doi: 10.1117/12.2258599; https://doi.org/10.1117/12.2258599
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