22 December 2016 Characterization thin films TiO2 obtained in the magnetron sputtering process
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Proceedings Volume 10175, Electron Technology Conference 2016; 1017516 (2016) https://doi.org/10.1117/12.2261873
Event: Electron Technology Conference ELTE 2016, 2016, Wisla, Poland
Abstract
The aim of the study was to elucidate influence parameters of magnetron sputtering process on growth rate and quality of titanium dioxide thin films. TiO2 films were produced on two inch silicon wafers by means of magnetron sputtering method. Characterization of samples was performed using ellipsometer and atomic force microscope (AFM). Currentvoltage (I-V) and capacitance-voltage (C-V) measurements were also carried out. The results enable to determine impact of pressure, power, gases flow and process duration on the physical parameters obtained layers such as electrical permittivity, flat band voltage and surface topography. Experiments were designed according to orthogonal array Taguchi method. Respective trends impact were plotted.
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Maciej Kamiński, Maciej Kamiński, Piotr Firek, Piotr Firek, Piotr Caban, Piotr Caban, } "Characterization thin films TiO2 obtained in the magnetron sputtering process", Proc. SPIE 10175, Electron Technology Conference 2016, 1017516 (22 December 2016); doi: 10.1117/12.2261873; https://doi.org/10.1117/12.2261873
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