22 December 2016 Technology and characterization of Thin-Film Transistors (TFTs) with a-IGZO semiconductor and high-k dielectric layer
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Proceedings Volume 10175, Electron Technology Conference 2016; 101751A (2016) https://doi.org/10.1117/12.2258741
Event: Electron Technology Conference ELTE 2016, 2016, Wisla, Poland
Abstract
In this work, we present the design of the technology and fabrication of TFTs with amorphous IGZO semiconductor and high-k gate dielectric layer in the form of hafnium oxide (HfOx). In the course of this work, the IGZO fabrication was optimized by means of Taguchi orthogonal tables approach in order to obtain an active semiconductor with reasonable high concentration of charge carriers, low roughness and relatively high mobility. The obtained Thin-Film Transistors can be characterized by very good electrical parameters, i.e., the effective mobility (μeff ≈ 12.8 cm2V-1s-1) significantly higher than that for a-Si TFTs (μeff ≈ 1 cm2V-1s-1). However, the value of sub-threshold swing (i.e., 640 mV/dec) points that the interfacial properties of IGZO/HfOx stack is characterized by high value of interface states density (Dit) which, in turn, demands further optimization for future applications of the demonstrated TFT structures.
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R. Mroczyński, R. Mroczyński, Ł. Wachnicki, Ł. Wachnicki, S. Gierałtowska, S. Gierałtowska, } "Technology and characterization of Thin-Film Transistors (TFTs) with a-IGZO semiconductor and high-k dielectric layer", Proc. SPIE 10175, Electron Technology Conference 2016, 101751A (22 December 2016); doi: 10.1117/12.2258741; https://doi.org/10.1117/12.2258741
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