22 December 2016 a-SiCxNy:H thin films for applications in solar cells as passivation and antireflective coatings
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Proceedings Volume 10175, Electron Technology Conference 2016; 101751C (2016) https://doi.org/10.1117/12.2263801
Event: Electron Technology Conference ELTE 2016, 2016, Wisla, Poland
Amorphous a-SiCxNy:H thin films may be an alternative to a-Si:N:H coatings which are commonly used in silicon solar cells. This material was obtained by PECVD (13.56 MHz) method. The reaction gases used: silane, methane, nitrogen and ammonia. The structure of the layers were investigated by scanning electron microscopy (SEM) and infrared spectroscopy (FTIR). IR absorption spectra of a-SiCxNy:H layers confirmed the presence of various hydrogen bonds – it is important for passivation of Si structural defects. The ellipsometric measurements were implemented to determine the thickness of layers d, refractive index n, extinction coefficient k and energy gap Eg. The values of the energy gap of a-SiCxNy:H layers are in the range from 1.89 to 4.34 eV. The correlation between energy gap of materials and refractive index was found. Generally the introduction of N and/or C into the amorphous silicon network rapidly increases the Eg values.
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Barbara Swatowska, Stanisława Kluska, Gabriela Lewińska, Julia Golańska, Tomasz Stapiński, "a-SiCxNy:H thin films for applications in solar cells as passivation and antireflective coatings", Proc. SPIE 10175, Electron Technology Conference 2016, 101751C (22 December 2016); doi: 10.1117/12.2263801; https://doi.org/10.1117/12.2263801

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