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14 December 2016 Mg2SixSn1-xheterostructures on Si(111) substrate for optoelectronics and thermoelectronics
Nikolay G. Galkin, Konstantin N. Galkin, Sergey A. Dotsenko, Igor M. Chernev, Andrei M. Maslov, L. Dózsa, B. Pécz, Z. Osváth, I. Cora, D. B. Migas, R. Kudrawiec, J. Misiewicz
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Proceedings Volume 10176, Asia-Pacific Conference on Fundamental Problems of Opto- and Microelectronics; 1017604 (2016) https://doi.org/10.1117/12.2268266
Event: Asia-Pacific Conference on Fundamental Problems of Opto- and Microelectronics, 2016, Khabarovsk, Russia
Abstract
Thin (50-90 m) non-doped and doped (by Al atoms) Mg2Sn0.6Si0.4 and Mg2Sn0.4Si0.6films with roughness of 1.9-3.7 nm have been grown by multiple deposition and single annealing at 150 °C of multilayers formed by repetition deposition of three-layers (Si-Sn-Mg) on Si(111) p-type wafers with 45 Ω-cm resistivity. Transmission electron microscopy has shown that the first forming layer is an epitaxial layer of hex-Mg2Sn(300) on Si(111) substrate with thickness not more than 5-7 nm. Epitaxial relationships:hex-Mg2Sn(300)|| Si(111), hex-Mg2Sn[001]|| Si[-112] and hex-Mg2Sn[030]||Si[110] have been found for the epitaxial layer. But inclusions of cub-Mg2Si were also observed inside hex-Mg2Sn layer. It was found that the remaining part of the film thickness is in amorphous state and has a layered distribution of major elements: Mg, Sn and Mg without exact chemical composition. It was established by optical spectroscopy data that both type films are semiconductor with undispersed region lower 0.18 eV with no= 3.59 ± 0.01, but only two direct interband transitions with energies 0.75-0.76 eV and 1.2 eV have been determined. The last interband transition has been confirmed by photoreflectance data at room temperature. Fourier transmittance spectroscopy and Raman spectroscopy data have established the formation of stannide, silicide and ternary compositions.
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Nikolay G. Galkin, Konstantin N. Galkin, Sergey A. Dotsenko, Igor M. Chernev, Andrei M. Maslov, L. Dózsa, B. Pécz, Z. Osváth, I. Cora, D. B. Migas, R. Kudrawiec, and J. Misiewicz "Mg2SixSn1-xheterostructures on Si(111) substrate for optoelectronics and thermoelectronics", Proc. SPIE 10176, Asia-Pacific Conference on Fundamental Problems of Opto- and Microelectronics, 1017604 (14 December 2016); https://doi.org/10.1117/12.2268266
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KEYWORDS
Magnesium
Optical properties
Optoelectronics
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