14 December 2016 An influence of formation methods of laser layer’s welding on their phase composition and magnetic properties
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Proceedings Volume 10176, Asia-Pacific Conference on Fundamental Problems of Opto- and Microelectronics; 1017622 (2016) https://doi.org/10.1117/12.2268259
Event: Asia-Pacific Conference on Fundamental Problems of Opto- and Microelectronics, 2016, Khabarovsk, Russia
Abstract
Comparative study of laser welding method has been carried out at four different methods of welding in Sm-Co system on two types of substrates: stainless steel and duralumin and at two types of argon gas flow in the place of melting. The comparison of compositions and magnetic properties of welded coatings has been done for all formed samples. It was established that SmCo8.5 compound conserves only after laser welding of SmCo8.5 tablets with additional contribution of oxides that results to strongly decrease of saturation magnetization and coercivity as compared with SmCo8.5 films. In the case of the standard argon gas flow and using of Sm and Co powders the quick melting of the stainless steel substrate surface occurs that results to strong diffusion of transition metals to the welded layer and formation of Sm-based, noncrystalline alloy with only two crystalline phases (Co0.72Fe0.28 and Co), which demonstrate soft ferromagnetic properties. The formation of Sm-Co chemical compound is blocked when the Co welding carried out after Sm welding due to formation of Sm oxides on the welding surface. In the conditions of a stable argon atmosphere around the sample the pure Co and Sm crystals have been formed with weak ferromagnetic properties.
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Nikolay G. Galkin, Nikolay G. Galkin, Yuri N. Kulchin, Yuri N. Kulchin, Evgeniy P. Subbotin, Evgeniy P. Subbotin, Maxim E. Stebliy, Maxim E. Stebliy, Aleksander I. Nikitin, Aleksander I. Nikitin, Dmitriy S. Yatsko, Dmitriy S. Yatsko, } "An influence of formation methods of laser layer’s welding on their phase composition and magnetic properties", Proc. SPIE 10176, Asia-Pacific Conference on Fundamental Problems of Opto- and Microelectronics, 1017622 (14 December 2016); doi: 10.1117/12.2268259; https://doi.org/10.1117/12.2268259
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