3 May 2017 A low-power CMOS readout IC design for bolometer applications
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Proceedings Volume 10177, Infrared Technology and Applications XLIII; 101771U (2017); doi: 10.1117/12.2262459
Event: SPIE Defense + Security, 2017, Anaheim, California, United States
Abstract
A prototype of a readout IC (ROIC) designed for use in high temperature coefficient of resistance (TCR) SiGe microbolometers is presented. The prototype ROIC architecture implemented is based on a bridge with active and blind bolometer pixels with a capacitive transimpedance amplifier (CTIA) input stage and column parallel integration with serial readout. The ROIC is designed for use in high (≥ 4 %/K) TCR and high detector resistance Si/SiGe microbolometers with 17x17 μm2 pixel sizes in development. The prototype has been designed and fabricated in 0.25- μm SiGe:C BiCMOS process.
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Arman Galioglu, Shahbaz Abbasi, Atia Shafique, Ömer Ceylan, Melik Yazici, Mehmet Kaynak, Emre C. Durmaz, Elif Gul Arsoy, Yasar Gurbuz, "A low-power CMOS readout IC design for bolometer applications", Proc. SPIE 10177, Infrared Technology and Applications XLIII, 101771U (3 May 2017); doi: 10.1117/12.2262459; http://dx.doi.org/10.1117/12.2262459
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KEYWORDS
Bolometers

Sensors

Resistance

Readout integrated circuits

Microbolometers

Prototyping

Germanium

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