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16 May 2017 Large-format multi-wafer production of 5" GaSb-based photodetectors by molecular beam epitaxy
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GaSb and its heterostructures grown by molecular beam epitaxy (MBE) have received much attention given their application in a wide range of mid-wave and long-wave IR photodetector applications. With the maturation of the MBE growth process, focus is now turned to improving manufacturing readiness and the transition to the production of large-format wafers. We will discuss the transition from the development of early detector layer structures on 2” diameter GaSb substrates, through today’s 3”/4” production standard, and to the onset of 5” pilot production from the perspective of volume compound semiconductor manufacturing. We will report on the growth of 5” GaSb-based MWIR nBn detector structures using a large format 5×5” production MBE platform. Structural and optical properties, as well as electrical data from large-area mesa diodes will be presented and compared with results achieved with smaller batch size MBE reactor platform.
Conference Presentation
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Dmitri Loubychev, Joel M. Fastenau, Michael Kattner, Phillip Frey, Amy W. K. Liu, and Mark J. Furlong "Large-format multi-wafer production of 5" GaSb-based photodetectors by molecular beam epitaxy", Proc. SPIE 10177, Infrared Technology and Applications XLIII, 1017718 (16 May 2017);

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