We describe our recent results in developing and maturing small pixel (5μm pitch), high definition (HD) mid-wave infrared (MWIR) detector technology as well as focal-plane-array (FPA) hybrids, and prototype 2.4 Megapixel camera development operating at high temperature with low dark current and high operability. Advances in detector performance over the last several years have enabled III-V high operating temperature (T≥150K), unipolar detectors to emerge as an attractive alternative to HgCdTe detectors. The relative ease of processing the materials into large-format, small-pitch FPAs offers a cost-effective solution for tactical imaging applications in the MWIR band. In addition, small pixel detector technology enables a reduction in size of the system components, from the detector and ROIC chips to the focal length of the optics and lens size, resulting in an overall compactness of the sensor package, cooling and associated electronics. An MBE system has been used to grow antimony-based detector structures with 5.1μm cutoff with low total thickness variation (TTV) across a 3” wafer, in order to realize high interconnect yield for small-pitch FPAs. A unique indium bump scheme is proposed to realize 5μm pitch arrays with high connectivity yield. Several 1kx2k /5μm hybrids have been fabricated using Cyan’s CS3 ROICs with proper backend processing and finally packaged into a portable Dewar camera. The FPA radiometric result is showing low median dark current of 2.3x10-5 A/cm2 with > 99.9% operability, and >60% QE (without AR coating).