16 May 2017 High quantum efficiency mid-wavelength infrared superlattice photodetector
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Abstract
We report high quantum efficiency (QE) MWIR barrier photodetectors based on the InAs/GaSb/AlSb type II superlattice (T2SL) material system. The nBp design consists of a single unipolar barrier (InAs/AlSb SL) placed between a 4 μm thick p-doped absorber (InAs/GaSb SL) and an n-type contact layer (InAs/GaSb SL). At 80K, the device exhibited a 50% cut-off wavelength of 5 μm, was fully turned-ON at zero bias and the measured QE was 62% (front side illumination with no AR coating) at 4.5 μm with a dark current density of 8.5×10-9 A/cm2 . At 150 K and Vb=50 mV, the 50% cut-off wavelength increased to 5.3 μm and the quantum efficiency (QE) was measured to be 64% at 4.5 μm with a dark current of 1.07×10-4 A/cm2 . The measurements were verified at multiple AFRL laboratories. The results from this device along with the analysis will be presented in this paper.
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Alireza Kazemi, Alireza Kazemi, Stephen Myers, Stephen Myers, Zahra Taghipour, Zahra Taghipour, Sen Mathews, Sen Mathews, Ted Schuler-Sandy, Ted Schuler-Sandy, Seung Hyun Lee, Seung Hyun Lee, Vincent M. Cowan, Vincent M. Cowan, Eli Garduno, Eli Garduno, Elizabeth Steenbergen, Elizabeth Steenbergen, Christian Morath, Christian Morath, Gamini Ariyawansa, Gamini Ariyawansa, John Scheihing, John Scheihing, Sanjay Krishna, Sanjay Krishna, } "High quantum efficiency mid-wavelength infrared superlattice photodetector", Proc. SPIE 10177, Infrared Technology and Applications XLIII, 101771M (16 May 2017); doi: 10.1117/12.2263879; https://doi.org/10.1117/12.2263879
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