3 May 2017 A low-power CMOS readout IC design for bolometer applications
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A prototype of a readout IC (ROIC) designed for use in high temperature coefficient of resistance (TCR) SiGe microbolometers is presented. The prototype ROIC architecture implemented is based on a bridge with active and blind bolometer pixels with a capacitive transimpedance amplifier (CTIA) input stage and column parallel integration with serial readout. The ROIC is designed for use in high (≥ 4 %/K) TCR and high detector resistance Si/SiGe microbolometers with 17x17 μm2 pixel sizes in development. The prototype has been designed and fabricated in 0.25- μm SiGe:C BiCMOS process.
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Arman Galioglu, Arman Galioglu, Shahbaz Abbasi, Shahbaz Abbasi, Atia Shafique, Atia Shafique, Ömer Ceylan, Ömer Ceylan, Melik Yazici, Melik Yazici, Mehmet Kaynak, Mehmet Kaynak, Emre C. Durmaz, Emre C. Durmaz, Elif Gul Arsoy, Elif Gul Arsoy, Yasar Gurbuz, Yasar Gurbuz, } "A low-power CMOS readout IC design for bolometer applications", Proc. SPIE 10177, Infrared Technology and Applications XLIII, 101771U (3 May 2017); doi: 10.1117/12.2262459; https://doi.org/10.1117/12.2262459

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