3 May 2017 Resonator-QWIPs for 10.6 micron detection
Author Affiliations +
Abstract
We designed R-QWIP devices for narrowband 10.6 μm detection. Despite the low doping of 0.2 and 0.3 × 1018 cm-3 and thin absorbing layer thickness of 1 μm, the observed QE is 29% and 26%, respectively. This level of QEs, combined with the large photoconductive gain in a thin layer, produces large conversion efficiencies of 20% and 15% for large photocurrents. The high photocurrent and low dark current brought by low doping thus allow the QWIPs to be BLIP at 65 K with an 11 μm cutoff. The projected NETD is 20 mK at 60 K, demonstrating the high performance of R-QWIPs.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. K. Choi, K. K. Choi, R. E. Bornfreund, R. E. Bornfreund, J. G. Sun, J. G. Sun, E. A. DeCuir, E. A. DeCuir, } "Resonator-QWIPs for 10.6 micron detection", Proc. SPIE 10177, Infrared Technology and Applications XLIII, 101772A (3 May 2017); doi: 10.1117/12.2262514; https://doi.org/10.1117/12.2262514
PROCEEDINGS
8 PAGES


SHARE
RELATED CONTENT

Small pitch resonator-QWIP detectors and arrays
Proceedings of SPIE (May 14 2018)
C-QWIPs for far infrared detection
Proceedings of SPIE (May 03 2010)
Quantum well infrared detection devices
Proceedings of SPIE (June 12 2001)
Electromagnetic modeling of QWIP FPA pixels
Proceedings of SPIE (May 20 2011)
C-QWIP focal plane array development
Proceedings of SPIE (September 03 2008)

Back to Top