3 May 2017 Resonator-QWIPs for 10.6 micron detection
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We designed R-QWIP devices for narrowband 10.6 μm detection. Despite the low doping of 0.2 and 0.3 × 1018 cm-3 and thin absorbing layer thickness of 1 μm, the observed QE is 29% and 26%, respectively. This level of QEs, combined with the large photoconductive gain in a thin layer, produces large conversion efficiencies of 20% and 15% for large photocurrents. The high photocurrent and low dark current brought by low doping thus allow the QWIPs to be BLIP at 65 K with an 11 μm cutoff. The projected NETD is 20 mK at 60 K, demonstrating the high performance of R-QWIPs.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. K. Choi, K. K. Choi, R. E. Bornfreund, R. E. Bornfreund, J. G. Sun, J. G. Sun, E. A. DeCuir, E. A. DeCuir, } "Resonator-QWIPs for 10.6 micron detection", Proc. SPIE 10177, Infrared Technology and Applications XLIII, 101772A (3 May 2017); doi: 10.1117/12.2262514; https://doi.org/10.1117/12.2262514


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