3 May 2017 Resonator-QWIPs for 10.6 micron detection
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Abstract
We designed R-QWIP devices for narrowband 10.6 μm detection. Despite the low doping of 0.2 and 0.3 × 1018 cm-3 and thin absorbing layer thickness of 1 μm, the observed QE is 29% and 26%, respectively. This level of QEs, combined with the large photoconductive gain in a thin layer, produces large conversion efficiencies of 20% and 15% for large photocurrents. The high photocurrent and low dark current brought by low doping thus allow the QWIPs to be BLIP at 65 K with an 11 μm cutoff. The projected NETD is 20 mK at 60 K, demonstrating the high performance of R-QWIPs.
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K. K. Choi, R. E. Bornfreund, J. G. Sun, E. A. DeCuir, "Resonator-QWIPs for 10.6 micron detection", Proc. SPIE 10177, Infrared Technology and Applications XLIII, 101772A (3 May 2017); doi: 10.1117/12.2262514; https://doi.org/10.1117/12.2262514
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