16 May 2017 Short wavelength infrared photodetector and light emitting diode based on InGaAsSb
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We report on InGaAsSb infrared photodetector and light emitting diode for short wavelength infrared detection and emission. The InGaAsSb samples were grown by molecular beam epitaxy (MBE) system on a GaSb substrate. In order to investigate the structural properties of InGaAsSb layer, we took a high resolution XRD and low voltage SEM. The InGaAsSb devices were processed in 400×400 μm2 using inductively coupled plasma etching. We have measured the spectral response of InGaAsSb based photodetector using various temperature and bias. The cut-off wavelength of photodetector was 3.0 μm at room temperature. We also report an electroluminescence of InGaAsSb LED. Keywords: Short wavelength infrared, photodetector, light emitting diode, InGaAsSb, GaSb.
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Jun Oh Kim, Tien Dai Nguyen, Zahyun Ku, Augustine Urbas, Sang-Woo Kang, Sang Jun Lee, "Short wavelength infrared photodetector and light emitting diode based on InGaAsSb", Proc. SPIE 10177, Infrared Technology and Applications XLIII, 101772M (16 May 2017); doi: 10.1117/12.2264969; https://doi.org/10.1117/12.2264969

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