27 February 1989 Experiences With The Reactive Low Voltage Ion Plating In Optical Thin Film Production
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Proceedings Volume 1019, Thin Film Technologies III; (1989) https://doi.org/10.1117/12.950036
Event: 1988 International Congress on Optical Science and Engineering, 1988, Hamburg, Germany
Abstract
The transmission of interference filters consisting of Ta205, Ti02, Zr02 and Si02 layers were measured at temperatures between 25°C and 185°C. Some characteristic differences between filters produced by reactive evaporation and reactive ion plating are demonstrated and discussed.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. Gurtler, U. Jeschkowski, E. Conrath, "Experiences With The Reactive Low Voltage Ion Plating In Optical Thin Film Production", Proc. SPIE 1019, Thin Film Technologies III, (27 February 1989); doi: 10.1117/12.950036; https://doi.org/10.1117/12.950036
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