Paper
27 February 1989 Magnetron Sputtering Deposition Of Ultrathin W-Si Multilayers For X Rays Optics
B. Vidal, J. Marfaing, P. Dhez
Author Affiliations +
Proceedings Volume 1019, Thin Film Technologies III; (1989) https://doi.org/10.1117/12.950030
Event: 1988 International Congress on Optical Science and Engineering, 1988, Hamburg, Germany
Abstract
New magnetic materials and X Ray mirrors lead to prepare multilayered structures (M.L.S.) with the thinnest periodic layers. However physical limitations appear for periods below some tens of Å. In particular, tolerances of realization are critical relatively to ultrathin thicknesses values. In sputtering, the deposition rate is easily reproducible, and can be maintained at a constant and low value during severals hours; for these reasons we are able to perform a large number (more than one hundred) of periodic ultrathin layers by this system (3 to 1.5 nm). High Resolution Transmission Electron Microscopy (H.R.T.E.M.) and X Ray reflectivity measurements are used to compare interfaces and stacking regularities for sample with 140 layers. The W/Si M.L.S. present a best quality, as for interfaces and structures, compared to the W/C M.L.S.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. Vidal, J. Marfaing, and P. Dhez "Magnetron Sputtering Deposition Of Ultrathin W-Si Multilayers For X Rays Optics", Proc. SPIE 1019, Thin Film Technologies III, (27 February 1989); https://doi.org/10.1117/12.950030
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Cited by 7 scholarly publications.
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KEYWORDS
Reflectivity

Multilayers

Silicon

Interfaces

Sputter deposition

Mirrors

Thin films

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