8 May 2017 Radiation effects testing via semiconductor nonlinear optics: successes and challenges
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Abstract
Single-event effects (SEEs) refer to phenomena that arise from the interaction of single energetic particles with microelectronic devices, as is experienced in harsh radiation environments. Carrier generation induced by two-photon absorption (TPA) has become a valuable tool for SEE investigations of microelectronic structures owing to its unique ability to inject carriers through the wafer, directly into well-defined locations in complex circuits. Recent effort has focused on putting the TPA SEE technique on a more quantitative basis. This paper addresses the recent successes in achieving this goal, as well as the challenges that are faced moving forward.
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Dale McMorrow, Joel M. Hales, Ani Khachatrian, Stephen P. Buchner, Jeffrey H. Warner, "Radiation effects testing via semiconductor nonlinear optics: successes and challenges", Proc. SPIE 10193, Ultrafast Bandgap Photonics II, 1019307 (8 May 2017); doi: 10.1117/12.2262841; https://doi.org/10.1117/12.2262841
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