Modeling and spectroscopy of carrier relaxation in semiconductor optoelectronics

A. C. Scofield; A. I. Hudson; B. L. Liang; B. C. Juang; D. L. Huffaker; W. T. Lotshaw

doi:10.1117/12.2262807

8 May 2017 Modeling and spectroscopy of carrier relaxation in semiconductor optoelectronics

A. C. Scofield; A. I. Hudson; B. L. Liang; B. C. Juang; D. L. Huffaker; W. T. Lotshaw

Author Affiliations +

Proceedings Volume 10193, Ultrafast Bandgap Photonics II; 101930C (2017) https://doi.org/10.1117/12.2262807
Event: SPIE Defense + Security, 2017, Anaheim, California, United States

Abstract

The end performance of semiconductor optoelectronic devices is largely determined by the carrier dynamics of the constituent base materials. When combined with full-scale numerical models, optical spectroscopy is capable of providing detailed information about carrier generation and dynamics that is essential to accurate analysis of empirical test structure studies, and to translating those results into predictions for device performance. We have applied time-resolved and steady-state luminescence techniques to a variety of III-V materials and reference structures in order to investigate the mechanisms controlling carrier dynamics and to develop diagnostic tools to provide actionable feedback to R and D efforts for improvement and optimization of material/device performance.

Citation Download Citation

A. C. Scofield, A. I. Hudson, B. L. Liang, B. C. Juang, D. L. Huffaker, W. T. Lotshaw, "Modeling and spectroscopy of carrier relaxation in semiconductor optoelectronics", Proc. SPIE 10193, Ultrafast Bandgap Photonics II, 101930C (8 May 2017); doi: 10.1117/12.2262807; https://doi.org/10.1117/12.2262807

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