18 May 2017 Black phosphorous optoelectronic devices
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Proceedings Volume 10194, Micro- and Nanotechnology Sensors, Systems, and Applications IX; 101940E (2017); doi: 10.1117/12.2263244
Event: SPIE Defense + Security, 2017, Anaheim, California, United States
Abstract
Black phosphorus recently emerged as a promising two-dimensional material due to its widely tunable and direct bandgap, high carrier mobility and remarkable in-plane anisotropic electrical, optical and phonon properties. It serendipitously bridges the zero-gap graphene and the relatively large-bandgap transition metal dichalcogenides such as molybdenum disulfide (MoS2). In this brief review manuscript, we will first cover the basic properties of few-layer and thin-film black phosphorus. Then we will present a few potential applications of black phosphorus such as radiofrequency transistors and wideband photodetectors. Finally we will discuss the recent observation of efficient bandgap tuning in black phosphorus thin films in a dual-gate transistor, and conclude with the discussion of synthesis of large area and high quality black phosphorus thin films.
Conference Presentation
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Xiaolong Chen, Fengnian Xia, "Black phosphorous optoelectronic devices", Proc. SPIE 10194, Micro- and Nanotechnology Sensors, Systems, and Applications IX, 101940E (18 May 2017); doi: 10.1117/12.2263244; https://doi.org/10.1117/12.2263244
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KEYWORDS
Thin films

Phosphorus

Field effect transistors

Transistors

Photodetectors

Optoelectronic devices

Optoelectronics

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