28 April 2017 Radio frequency sputtered AlxNy thin films for thermal detectors
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Abstract
This work presents the deposition and characterization of AlxNy thin films for using them as pyroelectric detector material. To test the pyroelectric effect, capacitors with Au electrodes were fabricated. The diameter of the electrodes for capacitor used was 1100 μm while the distances between these two electrodes was 2200 μm. On a 3- inch diameter cleaned silicon wafer a 100-nm thick AlxNy films were deposited using an Al target and Ar:N2 = 1:1 flow and 5 mTorr chamber pressure. Finally, a 100-nm thick Au layer was deposited and lifted off by using conventional photo lithography to form the electrodes of capacitors. All the layers were deposited by radio frequency sputtering at room temperature. The AlxNy thin films were annealed at 700 0C in N2 environment for 10 minutes. X-ray diffraction showed that the films are poly-crystalline with peaks in (100), (002) and (101) directions. The pyroelectric current increased from 3.38 × 10-14 A at 303 K to 1.75 × 10-13 at 353 K. When the temperature varied between 303 K to 353 K the pyroelectric coefficient was increased from 8.60 × 10-9 C/m2K to 3.76 × 10-8 C/m2K while the loss tangent remains almost constant to ~1.5 × 10-5 when the temperature was varied in the same range.
Conference Presentation
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Nicholas Calvano, Philip Chrostoski, Andrew Voshell, Keesean Braithwaite, Dennis Prather, Murzy Jhabvala, Mukti Rana, "Radio frequency sputtered AlxNy thin films for thermal detectors", Proc. SPIE 10209, Image Sensing Technologies: Materials, Devices, Systems, and Applications IV, 102090J (28 April 2017); doi: 10.1117/12.2267089; https://doi.org/10.1117/12.2267089
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