This paper reports the development of 2000×256 format SWIR HgCdTe/Si FPA with multiple-choice gain (i.e. multiple-choice charge handling capacity) for hyperspectral detection. The spectral resolution is about 8nm. To meet the demands of variable low flux detection within each spectral band in the short wave infrared range, low dark current, low noise, variable conversion gains and high SNR (Signal to Noise Ratio) of FPA are needed. In this paper, we fabricate 512×512 pixel 30μm pitch SWIR HgCdTe diode array on Si by using a novel stress-release construction of HgCdTe chip on Si. Moreover, we design low noise, variable conversion gain and large dynamic range read-out integrated circuit (ROIC) and hybridized the ROIC on the HgCdTe diode array on Si substrate. There are 8-choice gains which can be selected locally according to the incident flux to meet high SNR detection demand. By high-accuracy splicing 4 512×512 HgCdTe/Si FPA we get mosaic 2000×512 FPA, and characterizations have been carried out and reveal that the array dark current densities on an order of 10-10A/cm2, quantum efficiency exceeding 70%, and the operability of 99.5% at operating temperature of around 110K. The SNR of this FPA achieved 120 when illuminated under 5×104photons/pixel.