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10 April 1989 Laser-Induced CVD Of Doped Silicon Stripes On SOS And Their Characterization By Piezoresistivity Measurements
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Proceedings Volume 1022, Laser Assisted Processing; (1989)
Event: 1988 International Congress on Optical Science and Engineering, 1988, Hamburg, Germany
An argon-ion laser with the visible cw radiation was used to deposit highly doped p-type silicon stripes on (1102) sapphire substrates covered by a 1 μm thick epitaxial silicon layer (SOS). The resistivity of the stripes deposited in an atmosphere of silane with 1% diborane was 0.5 to 2.5 mΩcm. The laser-induced pyrolytic deposition of silicon on SOS was analyzed using numerical simulations of the temperature distribution caused by a focused laser beam. Comparisons were made between experimental and calculated cross-sections of deposited stripes. The measurements of piezoresistivity were carried out by controlled bending of samples of rectangular shape upon which the stripes had been deposited. The stripes deposited along various directions on the substrate revealed anisotropic behaviour in their piezoresistivity properties. The results show that the stripes tend to adopt the same epitaxial crystalline orientation as the SOS layer. The longitudinal gauge factor along the [110] direction of silicon, which direction is normally used in strain sensor applications, varied between 15 and 44 depending on the laser power applied. A local temperature near the melting point of silicon seems to be needed to assure the epitaxial growth.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Lenkkeri, J. Levoska, T. T. Rantala, and S. Leppavuori "Laser-Induced CVD Of Doped Silicon Stripes On SOS And Their Characterization By Piezoresistivity Measurements", Proc. SPIE 1022, Laser Assisted Processing, (10 April 1989);

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