Photochemical deposition has attracted widespread interest as a technique for area selective, low temperature deposition of electronic materials. More recently, considerable attention has been focussed on the growth of compound semiconductors, and this paper will describe work which has been carried out on laser induced deposition of gallium arsenide. Stoichiometric gallium arsenide has been successfully deposited on gallium arsenide substrates using pulsed uv radiation from an excimer laser to decompose trimethyl gallium and arsine mixtures. The deposition was carried out in a modified MOCVD (Metallo-organic chemical vapour deposition) reactor using pressures of between 50-70 torr and substrate temperatures of 300-400°C. Deposition has been obtained at two laser wavelengths, 193 nm and 248 nm, with the longer wavelength yielding superior material quality and improved area selectivity. Initially, the thickness of the deposit was limited by the accumulation of an opaque deposit on the reactor cell window which attenuated the laser beam. However, modification of the cell eliminated this problem, and, as a result, it has been possible to grow layers as thick as 2μm. This has enabled a preliminary assessment of the epitaxy of the deposited layers to be made.