10 April 1989 Photooxidation Of Implanted Silicon With Pulsed UV-Laser In Liquid Phase Regime
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Proceedings Volume 1022, Laser Assisted Processing; (1989) https://doi.org/10.1117/12.950118
Event: 1988 International Congress on Optical Science and Engineering, 1988, Hamburg, Germany
Abstract
We have investigated the incorporation of oxygen into implanted silicon during repetitive UV laser irradiation (λ= 193 nm) in air or in oxygen atmosphere at densities near or above the melting point. The structural and compositional properties of the grown oxide layers are analyzed by infrared spectroscopy, and Rutherford backscattering spectrometry. At low laser fluence, the oxide films are stoichiometric and present a slightly broadening of the Si-0 stretching band when compared to thermal oxide films, indicating the presence of a low degree of disorder in the films. The laser oxidation kinetic is shown to be limited by the diffusion with, however, a very high growth rate attributed to oxygen atoms created by the direct photodissociation of oxygen molecules and rapid diffusion of oxygen in molten silicon. The study of the symmetry of the Si-0 stretching band as a function of the laser fluence reveals that the increase of the bandwidth is essentially caused by the presence of a pronounced shoulder on the high-frequency side of the band, whose origin is discussed. The effects of the parameters of the implanted impurity (energy, dose and nature of the ion implanted) on the oxide quality were shown.
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Adelilah Slaoui, Adelilah Slaoui, Eric Fogarassy, Eric Fogarassy, Paul Siffert, Paul Siffert, Woody White, Woody White, } "Photooxidation Of Implanted Silicon With Pulsed UV-Laser In Liquid Phase Regime", Proc. SPIE 1022, Laser Assisted Processing, (10 April 1989); doi: 10.1117/12.950118; https://doi.org/10.1117/12.950118
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