10 April 1989 Pulsed Laser Synthesis And Printing Of Compound Semiconductors
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Proceedings Volume 1022, Laser Assisted Processing; (1989) https://doi.org/10.1117/12.950107
Event: 1988 International Congress on Optical Science and Engineering, 1988, Hamburg, Germany
Abstract
A systematic study on ruby laser processing of supported Ge/Se bilayer structures is reported. Depending on the sequence of the initial layers and processing parameters compound synthesis, total or partial ablation of one of the constituents or the compound formed and simultaneous transfer of the ablated material onto a separate substrate in close proximity is possible with one single laser pulse. The results establish a novel single step technique for local deposition of compound films with lateral dimensions down to the micrometer range from a multilayer structure on a transparent support as a source.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tamas Szorenyi, Tamas Szorenyi, Zsolt Toth, Zsolt Toth, } "Pulsed Laser Synthesis And Printing Of Compound Semiconductors", Proc. SPIE 1022, Laser Assisted Processing, (10 April 1989); doi: 10.1117/12.950107; https://doi.org/10.1117/12.950107
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