10 April 1989 Pulsed Laser Synthesis Of Titanium Silicides And Nitrides
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Proceedings Volume 1022, Laser Assisted Processing; (1989) https://doi.org/10.1117/12.950114
Event: 1988 International Congress on Optical Science and Engineering, 1988, Hamburg, Germany
Titanium films (120 nm) deposited on single-crystalline silicon (c-Si) and on poly-Si/Si02/c-Si substrates were subjected to Nd:glass laser irradiation in air. Ti/Si samples were also submitted to excimer laser irradiation in a nitrogen jet. From RBS analysis it follows that in the first case titanium silicide is formed on c-Si substrate after one pulse of 1.5 J/cm2 energy density. On the poly-Si substrate a lower fluence (1 J/cm2) was sufficient. The samples submitted to excimer laser irradiation in a nitrogen jet show silicide synthesis at the Ti/Si interface and titanium nitride synthesis at the metal surface. The nitride was shown to work well as an interdiffusion barrier.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E. D'Anna, E. D'Anna, G. Leggieri, G. Leggieri, A. Luches, A. Luches, M. Martino, M. Martino, S. Luby, S. Luby, Ion N. Mihailescu, Ion N. Mihailescu, "Pulsed Laser Synthesis Of Titanium Silicides And Nitrides", Proc. SPIE 1022, Laser Assisted Processing, (10 April 1989); doi: 10.1117/12.950114; https://doi.org/10.1117/12.950114

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