International Conference on Micro- and Nano-Electronics 2016
3-7 October 2016
Zvenigorod, Russian Federation
Front Matter: Volume 10224
Proc. SPIE 10224, Front Matter: Volume 10224, 1022401(24 January 2017);doi: 10.1117/12.2270028
Micro- and Nanoelectronic Materials and Films I
Proc. SPIE 10224, HfO2/Pr2O3 gate dielectric stacks, 1022402(30 December 2016);doi: 10.1117/12.2266784
Proc. SPIE 10224, Low resistance Ti/Si/Ti/Al/Ni/Au ohmic contact for AlGaN/GaN HEMT, 1022403(30 December 2016);doi: 10.1117/12.2267053
Proc. SPIE 10224, Tungsten alloyed with rhenium as an advanced material for heat-resistant silicon ICs interconnects, 1022404(30 December 2016);doi: 10.1117/12.2264789
Proc. SPIE 10224, Metal-assisted chemical etching of silicon with different metal films and clusters: a review, 1022405(30 December 2016);doi: 10.1117/12.2266862
Proc. SPIE 10224, Mechanical properties of bimetallic one-dimensional structures, 1022406(30 December 2016);doi: 10.1117/12.2267129
Proc. SPIE 10224, Optical coefficients of nanometer-thick copper and gold films in microwave frequency range, 1022407(30 December 2016);doi: 10.1117/12.2266504
Proc. SPIE 10224, Effective optical constants of silver nanofilms calculated in wide frequency range, 1022408(30 December 2016);doi: 10.1117/12.2267083
Proc. SPIE 10224, Analysis of contribution from various order diffraction maxima to complex magneto-optical Kerr effect from three-dimensional structures like magnetophotonic crystals, 1022409(30 December 2016);doi: 10.1117/12.2266012
Proc. SPIE 10224, Modulation of magnetic interaction in Bismuth ferrite through strain and spin cycloid engineering, 102240A(30 December 2016);doi: 10.1117/12.2267059
Proc. SPIE 10224, Quantum-mechanical relaxation model for characterization of fine particles magnetic dynamics in an external magnetic field , 102240B(30 December 2016);doi: 10.1117/12.2267172
Micro- and Nanoelectronic Materials and Films II
Proc. SPIE 10224, GeSi nanocrystals formed by high temperature annealing of GeO/SiO2 multilayers: structure and optical properties, 102240C(30 December 2016);doi: 10.1117/12.2266075
Proc. SPIE 10224, Hydrogenated amorphous silicon based p-i-n structures with Si and Ge nanocrystals in i-layers, 102240D(30 December 2016);doi: 10.1117/12.2266436
Proc. SPIE 10224, Investigation of the phase formation from nickel coated nanostructured silicon, 102240E(30 December 2016);doi: 10.1117/12.2264593
Proc. SPIE 10224, Chemical surface treatment of Ge2Sb2Te5 thin films for phase change memory application, 102240F(30 December 2016);doi: 10.1117/12.2267157
Proc. SPIE 10224, Some important aspects in the glass structure of chalcogenide systems , 102240G(30 December 2016);doi: 10.1117/12.2266801
Proc. SPIE 10224, Study of morphological characteristic of por-Si formed using metal-assisted chemical etching by BET-method and fractal geometry, 102240H(30 December 2016);doi: 10.1117/12.2267147
Proc. SPIE 10224, Formation of nanoporous structure in silicon substrate using two-stage annealing process, 102240I(30 December 2016);doi: 10.1117/12.2267071
Proc. SPIE 10224, Application of porous alumina formed in selenic acid solution for nanostructures investigation via Raman spectroscopy, 102240J(30 December 2016);doi: 10.1117/12.2267148
Proc. SPIE 10224, Low-threshold field emission in planar cathodes with nanocarbon materials, 102240K(30 December 2016);doi: 10.1117/12.2267126
Proc. SPIE 10224, The features of CNT growth on catalyst-content amorphous alloy layer by CVD-method, 102240L(30 December 2016);doi: 10.1117/12.2267052
Physics of Micro- and Nanodevices
Proc. SPIE 10224, Low-dimensional transit-time diodes for terahertz generation, 102240M(30 December 2016);doi: 10.1117/12.2267243
Proc. SPIE 10224, Efficiency of the signal detection in RF and sub THz ranges by means of GaAs tunnel diodes, 102240N(30 December 2016);doi: 10.1117/12.2267074
Proc. SPIE 10224, Electrically stimulated high-frequency replicas of a resonant current in GaAs/AlAs resonant-tunneling double-barrier THz nanostructures, 102240O(30 December 2016);doi: 10.1117/12.2266863
Proc. SPIE 10224, Photoresponse in graphene field effect transistor under ultra-short pulsed laser irradiation, 102240P(30 December 2016);doi: 10.1117/12.2266470
Proc. SPIE 10224, Dielectric influence on IV curve of graphene field effect transistor, 102240Q(30 December 2016);doi: 10.1117/12.2266244
Proc. SPIE 10224, Sn nanothreads in GaAs: experiment and simulation, 102240R(30 December 2016);doi: 10.1117/12.2267241
Proc. SPIE 10224, Thin film ruthenium microstructures for transition edge sensors, 102240S(30 December 2016);doi: 10.1117/12.2266275
Proc. SPIE 10224, Investigation of memristor effect on the titanium nanowires fabricated by focused ion beam, 102240T(30 December 2016);doi: 10.1117/12.2267084
Proc. SPIE 10224, Resistive switching of vertically aligned carbon nanotube by a compressive strain, 102240U(30 December 2016);doi: 10.1117/12.2266762
Modeling and Simulation
Proc. SPIE 10224, Simulation of field-effect transistors and resonant tunneling diodes based on graphene, 102240V(30 December 2016);doi: 10.1117/12.2265988
Proc. SPIE 10224, Ensemble Monte Carlo simulation of electron transport in GaAs/AlAs quantum wire structure under the effect of terahertz electric field, 102240W(30 December 2016);doi: 10.1117/12.2266775
Proc. SPIE 10224, Thermo injecting electrical instability in the AlxGa1-xAs/GaAs heterostructures with tunnel-nontransparent potential barriers, 102240X(30 December 2016);doi: 10.1117/12.2267032
Proc. SPIE 10224, I-V characteristics simulation of silicon carbide Ti/4H-SiC Schottky diode, 102240Y(30 December 2016);doi: 10.1117/12.2267088
Proc. SPIE 10224, Development of drift-diffusion numerical models of high-speed on-chip photodetectors with heterojunctions, 102240Z(30 December 2016);doi: 10.1117/12.2266628
Proc. SPIE 10224, Numerical modeling of microwave switchers with subpicosecond time delay , 1022410(30 December 2016);doi: 10.1117/12.2266551
Proc. SPIE 10224, Ambipolar memristor-based oscillator, 1022411(30 December 2016);doi: 10.1117/12.2266868
Proc. SPIE 10224, The spatially dispersive eigenvalues of permittivity operator and frequency-dependent surface impedance for conductors without the dc dissipation, 1022412(30 December 2016);doi: 10.1117/12.2267086
Proc. SPIE 10224, Calculation of the high-frequency conductivity and the Hall constant of a thin semiconductor film, 1022413(30 December 2016);doi: 10.1117/12.2265659
Proc. SPIE 10224, A simple calculation method for heavy ion induced soft error rate in space environment, 1022414(30 December 2016);doi: 10.1117/12.2267145
Proc. SPIE 10224, Compact modeling of radiation-induced drain leakage current, 1022415(30 December 2016);doi: 10.1117/12.2267161
Proc. SPIE 10224, Total ionizing dose effects modeling in common-gate tri-gate FinFETs using Verilog-A, 1022416(30 December 2016);doi: 10.1117/12.2266864
Proc. SPIE 10224, Application of triple modular redundancy for soft error mitigation in 65-28 nm CMOS VLSI, 1022417(30 December 2016);doi: 10.1117/12.2267143
Proc. SPIE 10224, Layout-aware simulation of soft errors in sub-100 nm integrated circuits, 1022418(30 December 2016);doi: 10.1117/12.2266880
Micro- and Nanoelectromechanical Systems
Proc. SPIE 10224, Silicon ohmic lateral-contact MEMS switch for RF applications, 1022419(30 December 2016);doi: 10.1117/12.2267093
Proc. SPIE 10224, A low actuation voltage bistable MEMS switch: design, fabrication and preliminary testing , 102241A(30 December 2016);doi: 10.1117/12.2266439
Proc. SPIE 10224, Research of the micromechanical three-axis accelerometer, 102241B(30 December 2016);doi: 10.1117/12.2266766
Proc. SPIE 10224, Simulation of heavy charged particles damage on MEMS, 102241C(30 December 2016);doi: 10.1117/12.2266750
Proc. SPIE 10224, Anchored multi-DOF MEMS gyroscope having robust drive mode, 102241D(30 December 2016);doi: 10.1117/12.2267115
Proc. SPIE 10224, Highly sensitive devices for primary signal processing of the micromechanical capacitive transducers, 102241E(30 December 2016);doi: 10.1117/12.2266562
Proc. SPIE 10224, Integral planar supercapacitor with CNT-based composite electrodes for heat-sensitive MEMS and NEMS, 102241F(30 December 2016);doi: 10.1117/12.2267079
Proc. SPIE 10224, Biosensor platform based on carbon nanotubes covalently modified with aptamers, 102241G(30 December 2016);doi: 10.1117/12.2267072
Proc. SPIE 10224, Angular MET sensor for precise azimuth determination, 102241H(30 December 2016);doi: 10.1117/12.2267073
Proc. SPIE 10224, The simulation model of planar electrochemical transducer, 102241I(30 December 2016);doi: 10.1117/12.2267082
Proc. SPIE 10224, The planar silicon-based microelectronic technology for electrochemical transducers , 102241J(30 December 2016);doi: 10.1117/12.2267095
Proc. SPIE 10224, The precision seismometer based on planar electrochemical transducer, 102241K(30 December 2016);doi: 10.1117/12.2267099
Proc. SPIE 10224, 3D simulation of silicon micro-ring resonator with Comsol, 102241L(30 December 2016);doi: 10.1117/12.2266783
Micro- and Nanoelectronic Technologies I
Proc. SPIE 10224, Electro-optical converter of zero-order and second-order Bessel laser beams for the photolithography systems, 102241M(30 December 2016);doi: 10.1117/12.2264691