Paper
30 December 2016 Investigation of memristor effect on the titanium nanowires fabricated by focused ion beam
V. I. Avilov, O. A. Ageev, I. L. Jityaev, A. S. Kolomiytsev, V. A. Smirnov
Author Affiliations +
Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 102240T (2016) https://doi.org/10.1117/12.2267084
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation
Abstract
The results of investigation of a memristor nanostructures based on titanium nanowires fabricated by methods of focused ion beams are presented. The memristor effect in the titanium nanowires is investigated by an AFM in the mode of spreading resistance map. It is shown that the using of FIB milling allows to form conductive channels with different shapes and nanoscale dimensions. The analysis of the I-Vs of Ti nanowire memristor structures shows that the resistivity ratio in the high- and low-resistance states is higher than 102. After a series of measurements determined that memristor structures have a high stability of resistance. The obtained results are most promising for developing the technological processes of the formation of resistive operation memory cells.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. I. Avilov, O. A. Ageev, I. L. Jityaev, A. S. Kolomiytsev, and V. A. Smirnov "Investigation of memristor effect on the titanium nanowires fabricated by focused ion beam", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 102240T (30 December 2016); https://doi.org/10.1117/12.2267084
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Cited by 8 scholarly publications.
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KEYWORDS
Nanowires

Titanium

Ion beams

Nanolithography

Resistance

Lawrencium

Nanostructures

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