30 December 2016 HfO2/Pr2O3 gate dielectric stacks
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Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 1022402 (2016) https://doi.org/10.1117/12.2266784
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation
Abstract
Electrical properties of MOS structures based on molecular beam epitaxy formed HfO2/Pr2O3 gate dielectric stacks have been studied by CV, GV and IV characteristics. Electrical properties of the structures with HfO2/Pr2O3 and PEALD HfO2 dielectric layers were compared. Higher gate leakage current and lower interface trap level density in the structure with HfO2/Pr2O3 dielectric layer was observed.
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F. Sidorov, F. Sidorov, A. Molchanova, A. Molchanova, A. Rogozhin, A. Rogozhin, } "HfO2/Pr2O3 gate dielectric stacks", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 1022402 (30 December 2016); doi: 10.1117/12.2266784; https://doi.org/10.1117/12.2266784
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