30 December 2016 Low resistance Ti/Si/Ti/Al/Ni/Au ohmic contact for AlGaN/GaN HEMT
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Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 1022403 (2016) https://doi.org/10.1117/12.2267053
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation
Abstract
This paper is dedicated to the experimental investigation of Ohmic contacts to the n+-doped region of AlGaN/GaN transistor heterostructure based on Ti/Si/Ti/Al/Ni/Au metallization. Effect of annealing temperature on the specific resistance of Ohmic contact was studied. Ohmic contact with the resistance of 3.4·10-6 Ω·cm2 was formed by optimization of the annealing temperature and introduction of the additional doping silicon layer.
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Stanislav A. Shostachenko, Stanislav A. Shostachenko, Roman V. Zakharchenko, Roman V. Zakharchenko, Roman V. Ryzhuk, Roman V. Ryzhuk, Darya A. Kulyamina, Darya A. Kulyamina, Nikolay I. Kargin, Nikolay I. Kargin, } "Low resistance Ti/Si/Ti/Al/Ni/Au ohmic contact for AlGaN/GaN HEMT", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 1022403 (30 December 2016); doi: 10.1117/12.2267053; https://doi.org/10.1117/12.2267053
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