30 December 2016 Tungsten alloyed with rhenium as an advanced material for heat-resistant silicon ICs interconnects
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Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 1022404 (2016) https://doi.org/10.1117/12.2264789
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation
Abstract
This paper presents the results of comparative analysis of the electrical and mechanical characteristics of the tungsten and tungsten alloyed with rhenium films deposited on silicon, from the point of view of their use as interconnects in silicon ICs. W and W (Re-5%) alloyed with rhenium films were made by magnetron deposition. Sheet resistivity for W and W (Re- 5%) was 13 and 27 μOhm·cm respectively. Elemental composition the formed films was examined by Auger spectroscopy. To investigate the electromigration resistance of the conductors a methodology based on the accelerated electromigration testing at constant temperature was used. A comparative analysis of the mechanical stresses carried out in the W and W(Re - 5%) films. For this purpose was applied non-destructive method for optical laser scanning. At the same time, these films explored their ability of adhesion to silicon and silicon oxide. It is shown that the pull force of the W(Re - 5%) films was ~1500 G/mm2, of the W films ~ 700 G/mm2
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A. N. Belov, A. N. Belov, Yu. A. Chaplygin, Yu. A. Chaplygin, A. A. Golishnikov, A. A. Golishnikov, D. A. Kostyukov, D. A. Kostyukov, M. G. Putrya, M. G. Putrya, S. O. Safonov, S. O. Safonov, V. I. Shevyakov, V. I. Shevyakov, } "Tungsten alloyed with rhenium as an advanced material for heat-resistant silicon ICs interconnects", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 1022404 (30 December 2016); doi: 10.1117/12.2264789; https://doi.org/10.1117/12.2264789
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