30 December 2016 GeSi nanocrystals formed by high temperature annealing of GeO/SiO2 multilayers: structure and optical properties
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Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 102240C (2016) https://doi.org/10.1117/12.2266075
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation
Abstract
The structural and optical properties of Ge and GeSi nanocrystals, formed by annealing of GeO/SiO2 multilayers have been investigated. According to Raman spectroscopy, the formation of pure Ge nanocrystals is observed after post growth annealing at 700 °C. Annealings at 800°C-900°C leads to the formation of intermixed GexSi1-x nanocrystals. High resolution transmission electron microscopy shows that the structure and the size of the nanocrystals strongly depend on annealing temperature. Spatial redistribution of Ge with the formation of large faceted clusters located near the Si substrate as well as GeSi intermixing at the substrate/film interface were observed. In the case of the sample containing 20 pairs of GeO/SiO2 layers annealed at 900 °C, some clusters exhibit a pyramid-like shape. FTIR absorption spectroscopy measurements demonstrate that intermixing between the GeO and SiO2 layers occurs leading to the formation of a SiGeO2 glass. Low temperature (10 K-100 K) photoluminescence was observed in the spectral range 1400-2000 nm for samples containing nanocrystals. The temperature dependence of the photoluminescence is studied.
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V. A. Volodin, A. G. Cherkov, V. I. Vdovin, M. Stoffel, H. Rinnert, M. Vergnat, "GeSi nanocrystals formed by high temperature annealing of GeO/SiO2 multilayers: structure and optical properties", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 102240C (30 December 2016); doi: 10.1117/12.2266075; https://doi.org/10.1117/12.2266075
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