30 December 2016 Chemical surface treatment of Ge2Sb2Te5 thin films for phase change memory application
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Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 102240F (2016) https://doi.org/10.1117/12.2267157
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation
Abstract
Influence of the alkalis (KOH, NaOH), acids (HNO3, HCl, H3PO4, H2SO4) and solvents (C3H7NO, deionized water) on the Ge2Sb2Te5 thin films was investigated. Most possible etching mechanism of GST225 thin films by HNO3 solution was proposed.
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M. S. Mikhailova, S. Y. Nemtseva, V. B. Glukhenkaya, P. I. Lazarenko, A. A. Sherchenkov, S. A. Kozyukhin, S. P. Timoshenkov, "Chemical surface treatment of Ge2Sb2Te5 thin films for phase change memory application", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 102240F (30 December 2016); doi: 10.1117/12.2267157; https://doi.org/10.1117/12.2267157
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