Low-dimensional transit-time diodes for terahertz generation

R. Khabutdinov; I. Semenikhin; F. Davydov; D. Svintsov; V. Vyurkov; L. Fedichkin; K. Rudenko; A. V. Borzdov; V. M. Borzdov

doi:10.1117/12.2267243

30 December 2016 Low-dimensional transit-time diodes for terahertz generation

R. Khabutdinov, I. Semenikhin, F. Davydov, D. Svintsov, V. Vyurkov, L. Fedichkin, K. Rudenko, A. V. Borzdov, V. M. Borzdov

Author Affiliations +

Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 102240M (2016) https://doi.org/10.1117/12.2267243
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation

Abstract

Low-dimensional transit-time structures for terahertz generation and detection are discussed. The negative conductivity at terahertz frequencies is crucial for generation. It may arise in an array of silicon nanowires (1D), as well as in a thin silicon layer (2D) in “silicon-on-insulator” wafer. Ballistic regime, scattering regime and alternating barrier injection regime (BARITT) are simulated. The latter allows a negative conductivity even for rather strong scattering.

Citation Download Citation

R. Khabutdinov, I. Semenikhin, F. Davydov, D. Svintsov, V. Vyurkov, L. Fedichkin, K. Rudenko, A. V. Borzdov, and V. M. Borzdov "Low-dimensional transit-time diodes for terahertz generation", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 102240M (30 December 2016); https://doi.org/10.1117/12.2267243

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