Photoresponse in graphene field effect transistor under ultra-short pulsed laser irradiation

Aleksei V. Emelianov; Dmitry M. Kireev; Nerea Otero; Pablo Romero; Ivan I. Bobrinetskiy

doi:10.1117/12.2266470

30 December 2016 Photoresponse in graphene field effect transistor under ultra-short pulsed laser irradiation

Aleksei V. Emelianov, Dmitry M. Kireev, Nerea Otero, Pablo Romero, Ivan I. Bobrinetskiy

Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 102240P (2016) https://doi.org/10.1117/12.2266470
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation

Abstract

We have developed the ultra-short pulsed laser processing methods for patterning of graphene field effect transistors in topological and chemical way. We investigated in details the photoresponse in graphene FETs before and after laser-induced modification for laser influence below threshold energy. We observed two different mechanisms of the photoresponse under ultra-short laser pulses (280 fs). The photocurrent, observed for both pristine and laser processed graphene is raised because the laser induced charge is transferred from graphene to trapped levels in SiO₂ surface resulting in electrostatic Dirac point shift. For laser oxidized areas we observed more pronounced photocurrent because of heterojunction formation in laser-processed area. While for electrostatic effect the relaxation time estimated as 50 seconds, the heterojunction relaxation was observed for less than 3 ms.

Citation Download Citation

Aleksei V. Emelianov, Dmitry M. Kireev, Nerea Otero, Pablo Romero, and Ivan I. Bobrinetskiy "Photoresponse in graphene field effect transistor under ultra-short pulsed laser irradiation", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 102240P (30 December 2016); https://doi.org/10.1117/12.2266470

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
5 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Graphene

Resistance

Field effect transistors

Laser processing

Femtosecond phenomena

Oxidation

Laser ablation

Show All Keywords

Keywords/Phrases

Search In:

Publication Years