30 December 2016 Sn nanothreads in GaAs: experiment and simulation
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Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 102240R (2016) https://doi.org/10.1117/12.2267241
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation
Abstract
The gated GaAs structures like the field-effect transistor with the array of the Sn nanothreads was fabricated via delta-doping of vicinal GaAs surface by Sn atoms with a subsequent regrowth. That results in the formation of the chains of Sn atoms at the terrace edges. Two device models were developed. The quantum model accounts for the quantization of the electron energy spectrum in the self-consistent two-dimensional electric potential, herewith the electron density distribution in nanothread arrays for different gate voltages is calculated. The classical model ignores the quantization and electrons are distributed in space according to 3D density of states and Fermi-Dirac statistics. It turned out that qualitatively both models demonstrate similar behavior, nevertheless, the classical one is in better quantitative agreement with experimental data. Plausibly, the quantization could be ignored because Sn atoms are randomly placed along the thread axis. The terahertz hot-electron bolometers (HEBs) could be based on the structure under consideration.
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I. Semenikhin, I. Semenikhin, V. Vyurkov, V. Vyurkov, A. Bugaev, A. Bugaev, R. Khabibullin, R. Khabibullin, D. Ponomarev, D. Ponomarev, A. Yachmenev, A. Yachmenev, P. Maltsev, P. Maltsev, M. Ryzhii, M. Ryzhii, T. Otsuji, T. Otsuji, V. Ryzhii, V. Ryzhii, } "Sn nanothreads in GaAs: experiment and simulation", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 102240R (30 December 2016); doi: 10.1117/12.2267241; https://doi.org/10.1117/12.2267241
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