30 December 2016 Resistive switching of vertically aligned carbon nanotube by a compressive strain
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Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 102240U (2016) https://doi.org/10.1117/12.2266762
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation
Abstract
The resistive switching of vertically aligned carbon nanotube (VA CNT) by the action of a compressive strain is shown. The memory cell based on compressed VA CNT has been created. Origin of resistive switching of strained VA CNT is described. It is shown the resistive switching associated with redistribution of deformation and corresponding piezoelectric charge in the nanotube. The ration resistance of high-resistance to low-resistance states of the memory cell amounts 7 at voltage reading of 0.2 V. The results can be used in the development nanoelectronics devices based on VA CNTs, including the resistive random-access memory.
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Marina V. Ilina, Yuriy F. Blinov, Oleg I. Ilin, Viktor S. Klimin, Oleg A. Ageev, "Resistive switching of vertically aligned carbon nanotube by a compressive strain", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 102240U (30 December 2016); doi: 10.1117/12.2266762; https://doi.org/10.1117/12.2266762
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