30 December 2016 Ensemble Monte Carlo simulation of electron transport in GaAs/AlAs quantum wire structure under the effect of terahertz electric field
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Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 102240W (2016) https://doi.org/10.1117/12.2266775
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation
Abstract
Ensemble Monte Carlo simulation of electron transport in GaAs/AlAs quantum wire transistor structure is performed. The response of electron drift velocity on the action of harmonic longitudinal electric field is calculated for several values of electric field strength amplitude and gate bias at 77 and 300 K. The periodical electric field has a 1 THz frequency. The nonlinear behaviour of electron drift velocity due to scattering processes is observed.
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Andrei V. Borzdov, Andrei V. Borzdov, Vladimir M. Borzdov, Vladimir M. Borzdov, Vladimir V. V'yurkov, Vladimir V. V'yurkov, } "Ensemble Monte Carlo simulation of electron transport in GaAs/AlAs quantum wire structure under the effect of terahertz electric field", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 102240W (30 December 2016); doi: 10.1117/12.2266775; https://doi.org/10.1117/12.2266775
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