CONFERENCE PROCEEDINGS
Advanced Search
Home > Proceedings > Volume 10224 > Article
Paper
30 December 2016 Thermo injecting electrical instability in the AlxGa1-xAs/GaAs heterostructures with tunnel-nontransparent potential barriers
S. A. Nikitov, P. P. Maltsev, V. A. Gergel, A. V. Verhovtseva, N. M. Gorshkova, V. V. Pavlovskiy, V. S. Minkin, A. A. Trofimov, A. Yu. Pavlov, R. A. Khabibullin
Author Affiliations +
Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 102240X (2016) https://doi.org/10.1117/12.2267032
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation
Abstract
Paper presents the results of research of electrical characteristics features of multibarrier AlxGa1-xAs/GaAs heterostructures with tunnel-nontransparent potential barriers. Briefly described constructive-technological features fabricated using molecular beam epitaxy. We measured the quasi-static current-voltage characteristics of test items by electric pulses of duration 10-6 s and a duty cycle of 103. Observed characteristics with a strong section of the negative differential resistance in the current range of several tens of milliampers. It is proposed to use this effect for the generation of terahertz electromagnetic radiation. Briefly stated the theoretical interpretation of the observed phenomena on the basis of quasi-hydrodynamic theory of electron drift.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation Download Citation
S. A. Nikitov, P. P. Maltsev, V. A. Gergel, A. V. Verhovtseva, N. M. Gorshkova, V. V. Pavlovskiy, V. S. Minkin, A. A. Trofimov, A. Yu. Pavlov, and R. A. Khabibullin "Thermo injecting electrical instability in the AlxGa1-xAs/GaAs heterostructures with tunnel-nontransparent potential barriers", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 102240X (30 December 2016); https://doi.org/10.1117/12.2267032
ACCESS THE FULL ARTICLE
ORGANIZATIONAL
Sign in with credentials provided by your organization.
INSTITUTIONAL
Select your institution to access the SPIE Digital Library.
SELECT YOUR INSTITUTION
PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
PERSONAL SIGN IN
No SPIE Account? Create one
PURCHASE THIS CONTENT
SUBSCRIBE TO DIGITAL LIBRARY
50 downloads per 1-year subscription
Members: $195
Non-members: $335 ADD TO CART
25 downloads per 1 - year subscription
Members: $145
Non-members: $250 ADD TO CART
PURCHASE SINGLE ARTICLE
Includes PDF, HTML & Video, when available
Members: $17.00
Non-members: $21.00 ADD TO CART
PROCEEDINGS
 4 PAGES
DOWNLOAD PAPER SAVE TO MY LIBRARY
GET CITATION
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Heterojunctions
Gallium arsenide
Resistance
Electromagnetic radiation
Molecular beam epitaxy
Terahertz radiation
Electronics
RELATED CONTENT
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top