30 December 2016 Thermo injecting electrical instability in the AlxGa1-xAs/GaAs heterostructures with tunnel-nontransparent potential barriers
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Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 102240X (2016) https://doi.org/10.1117/12.2267032
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation
Abstract
Paper presents the results of research of electrical characteristics features of multibarrier AlxGa1-xAs/GaAs heterostructures with tunnel-nontransparent potential barriers. Briefly described constructive-technological features fabricated using molecular beam epitaxy. We measured the quasi-static current-voltage characteristics of test items by electric pulses of duration 10-6 s and a duty cycle of 103. Observed characteristics with a strong section of the negative differential resistance in the current range of several tens of milliampers. It is proposed to use this effect for the generation of terahertz electromagnetic radiation. Briefly stated the theoretical interpretation of the observed phenomena on the basis of quasi-hydrodynamic theory of electron drift.
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S. A. Nikitov, P. P. Maltsev, V. A. Gergel, A. V. Verhovtseva, N. M. Gorshkova, V. V. Pavlovskiy, V. S. Minkin, A. A. Trofimov, A. Yu. Pavlov, R. A. Khabibullin, "Thermo injecting electrical instability in the AlxGa1-xAs/GaAs heterostructures with tunnel-nontransparent potential barriers", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 102240X (30 December 2016); doi: 10.1117/12.2267032; https://doi.org/10.1117/12.2267032
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