30 December 2016 I-V characteristics simulation of silicon carbide Ti/4H-SiC Schottky diode
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Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 102240Y (2016) https://doi.org/10.1117/12.2267088
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation
Abstract
The simulation of current-voltage characteristics for 4H-SiC Schottky diode with Ti Schottky contact has been carried out with used of TCAD program. Obtained current-voltage characteristics has been analyzed and compared with theoretical and experimental results. It is established that the Schottky diode parameters (forward current, ideality coefficient, Schottky barrier height, breakdown voltage) obtained in proposed model are good agreement with data for such type diodes.
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P. Panchenko, P. Panchenko, S. Rybalka, S. Rybalka, A. Malakhanov, A. Malakhanov, E. Krayushkina, E. Krayushkina, A. Radkov, A. Radkov, } "I-V characteristics simulation of silicon carbide Ti/4H-SiC Schottky diode", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 102240Y (30 December 2016); doi: 10.1117/12.2267088; https://doi.org/10.1117/12.2267088
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